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DMP3056LDM
P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Features
* Low RDS(ON): * 45m @VGS = -10V * 65m @VGS = -4.5V Low Input/Output Leakage Lead Free By Design/RoHS Compliant (Note 3) Qualified to AEC-Q101 Standards for High Reliability "Green" Device (Note 4)
Mechanical Data
* * * * * * * * Case: SOT-26 Case Material - Molded Plastic, "Green" Molding Compound. UL Flammability Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish - Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Marking Information: See Page 4 Ordering Information: See page 4 Weight: 0.008 grams (approximate)
* * * *
SOT-26
D
D
S
D
D
G
TOP VIEW
TOP VIEW Internal Schematic
Maximum Ratings
@TA = 25C unless otherwise specified Symbol VDSS VGSS TA = 25C TA = 70C ID IDM Value -30 20 -5 -4.2 -13 Unit V V A A
Characteristic Drain-Source Voltage Gate-Source Voltage Drain Current (Note 1) Continuous (VGS = -10V) Pulsed Drain Current (Note 2)
Thermal Characteristics
Characteristic Total Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient (Note 1); Steady-State Operating and Storage Temperature Range
Notes:
Symbol PD RJA TJ, TSTG
Value 1.25 100 -55 to +150
Unit W C/W C
1. Device mounted on 1"x1", FR-4 PC board on 0.1in.2 pads on 2 oz. Copper pads and test pulse width t 10s. 2. Repetitive Rating, pulse width limited by junction temperature. 3. No purposefully added lead. 4. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
DMP3056LDM
Document number: DS31449 Rev. 8 - 2
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September 2010
(c) Diodes Incorporated
DMP3056LDM
Electrical Characteristics @TA = 25C unless otherwise specified
Characteristic STATIC PARAMETERS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current Gate Threshold Voltage Static Drain-Source On-Resistance (Note 5) Forward Transconductance (Note 5) Diode Forward Voltage (Note 5) DYNAMIC PARAMETERS (Note 6) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance SWITCHING CHARACTERISTICS Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time
Notes:
Symbol BVDSS IDSS IGSS VGS(th) RDS (ON) gFS VSD Ciss Coss Crss RG
Min -30 -1.0
Typ 8 722 114 92 3.3
Max -1 100 800 -2.1 45 65 -1.2
Unit V A nA V m S V pF pF pF
Test Condition VGS = 0V, ID = -250A VGS = 0V, VDS = -30V VGS = 20V, VDS = 0V VGS = 25V, VDS = 0V VGS = VDS, ID = -250A VGS = -10V, ID = -5A VGS = -4.5V, ID = -4.2A VDS = -10V, ID = -4.3A VGS = 0V, IS = -1.7A VGS = 0V, VDS = -25V, f = 1.0MHz VDS = 0V, VGS = 0V f = 1.0MHz VDS = -15V, VGS = -4.5V, ID = -6A VDS = -15V, VGS = -10V, ID = -6A VDS = 0V, VGS = 0V, f = 1MHz VDS = -15V, VGS = -10V, ID = -1A, RG = 6.0
TJ = 25C
QG QG QGS QGD Rg td(on) tr td(off) tf

10.1 21.1 2.8 3.2 13.15 6.4 5.3 26.5 14.7

nC
nC
ns
5. Test pulse width t = 300s. 6. Guaranteed by design. Not subject to production testing.
12 11 10 -ID, DRAIN CURRENT (A) 9 8 7 6 5 4 3 2 1 0 0 0.5 1.5 2 2.5 3 3.5 4 4.5 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristics 1 5
VGS = -1.5V VGS = -1.0V VGS = -2.5V VGS = -3.0V VGS = -10V VGS = -4.5V
10 9 8 -ID, DRAIN CURRENT (A) 7 6 5 4 3 2 1 0 1 1.5 2 2.5 3 3.5 -VGS, GATE SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristics 4
TA = 150C TA = 125C TA = 85C TA = 25C TA = -55C VDS = 5V Pulsed
DMP3056LDM
Document number: DS31449 Rev. 8 - 2
2 of 6 www.diodes.com
September 2010
(c) Diodes Incorporated
DMP3056LDM
0.1
0.05
RDS(ON), STATIC DRAIN-SOURCE ON-RESISTANCE ()
RDS(ON), STATIC DRAIN-SOURCE ON-RESISTANCE ()
0.04
VGS = -4.5V ID = -3.7A
0.03
VGS = -4.5V
0.02
VGS = -10V ID = -4.3A
VGS = -10V
0.01
0.01 0.1
1 10 -ID, DRAIN-SOURCE CURRENT (A) Fig. 3 On-Resistance vs. Drain Current & Gate Voltage
0 -50
-25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (C) Fig. 4 Static Drain-Source On-Resistance vs. Ambient Temperature
3 -VTH, GATE THRESHOLD VOLTAGE (V) 2.8 2.6 2.4 2.2 2 1.8 1.6 1.4 1.2 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (C) Fig. 5 Gate Threshold Variation vs. Ambient Temperature 1 -50 ID = -250A
10,000
f = 1MHz
C, CAPACITANCE (pF)
1,000
Ciss
100
Coss Crss
10 0 5 10 15 20 25 30 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 6 Typical Total Capacitance
10
1.7
-IS, SOURCE CURRENT (A)
1
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED)
1.5
1.3
0.1
TA = 150C
1.1
VGS = -10V ID = -10A
0.01
TA = 125C TA = 85C T A = 25C
0.9
VGS = -4.5V ID = -5A
0.001
TA = -55C
0.7 0.5 -50
0.0001 0.2 0.4 0.6 0.8 1 1.2 -VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 7 Reverse Drain Current vs. Source-Drain Voltage 0
-25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Fig. 8 On-Resistance Variation with Temperature
DMP3056LDM
Document number: DS31449 Rev. 8 - 2
3 of 6 www.diodes.com
September 2010
(c) Diodes Incorporated
DMP3056LDM
100
R DS(on) Limited T J(MAX) = 150C T A = 25C Single Pulse
10
VGS, GATE-SOURCE VOLTAGE (V)
8
-ID, DRAIN CURRENT (A)
10
PW = 10s DC
6
VDS = -15V ID = 6A
1
PW = 10s PW = 1s PW = 100ms PW = 10ms
4
0.1
PW = 1ms PW = 100s
2
0.01 0.1 1 10 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 9 Safe Operation Area 1 r(t), TRANSIENT THERMAL RESISTANCE
D = 0.7 D = 0.5 D = 0.3
0 100 0 5 10 15 20 Qg, TOTAL GATE CHARGE (nC) Fig. 10 Gate-Charge Characteristics 25
0.1
D = 0.1 D = 0.9 D = 0.05 RJA(t) = r(t) * RJA RJA = 96C/W P(pk)
D = 0.02
0.01
D = 0.01 D = 0.005
t1
t2 TJ - TA = P * RJA(t) Duty Cycle, D = t 1/t2
D = Single Pulse
0.001 0.00001
0.0001
0.001
0.01 0.1 1 t1, PULSE DURATION TIME (s) Fig. 11 Transient Thermal Response
10
100
1,000
Ordering Information (Note 7)
Part Number DMP3056LDM-7
Notes:
Case SOT-26
Packaging 3000/Tape & Reel
7. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
DMA = Product Type Marking Code YM = Date Code Marking Y = Year (ex: V = 2008) M = Month (ex: 9 = September)
DMA
Date Code Key Year Code Month Code
2008 V Jan 1 Feb 2
2009 W Mar 3
2010 X Apr 4 May 5
YM
2011 Y Jun 6
2012 Z Jul 7 Aug 8
2013 A Sep 9
2014 B Oct O Nov N
2015 C Dec D
DMP3056LDM
Document number: DS31449 Rev. 8 - 2
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September 2010
(c) Diodes Incorporated
DMP3056LDM
Package Outline Dimensions
A
BC
H K M
J
D
L
SOT-26 Dim Min Max Typ A 0.35 0.50 0.38 B 1.50 1.70 1.60 C 2.70 3.00 2.80 D 0.95 H 2.90 3.10 3.00 J 0.013 0.10 0.05 K 1.00 1.30 1.10 L 0.35 0.55 0.40 M 0.10 0.20 0.15 0 8 All Dimensions in mm
Suggested Pad Layout
C2
C2
Z
G
C1
Y X
Dimensions Value (in mm) Z 3.20 G 1.60 X 0.55 Y 0.80 C1 2.40 C2 0.95
DMP3056LDM
Document number: DS31449 Rev. 8 - 2
5 of 6 www.diodes.com
September 2010
(c) Diodes Incorporated
DMP3056LDM
IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright (c) 2010, Diodes Incorporated www.diodes.com
DMP3056LDM
Document number: DS31449 Rev. 8 - 2
6 of 6 www.diodes.com
September 2010
(c) Diodes Incorporated

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